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MC14069UB

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UB

Hex Inverter

文件:115.69 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MC14069UB

Hex Inverter

文件:145.23 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MC14069UBCP

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBD

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBDR2

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBDT

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBDTEL

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBDTR2

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14069UBF

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件:171.8 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Type:

    Inverter

  • Channels:

    6

  • VCC Min (V):

    3

  • VCC Max (V):

    18

  • tpd Max (ns):

    100

  • IO Max (mA):

    null

  • Package Type:

    SOIC-14

供应商型号品牌批号封装库存备注价格
A
24+
b
16
询价
MOT
08+
SOP14
15
全新原装进口自己库存优势
询价
MOT
17+
SOP14
9988
只做原装进口,自己库存
询价
ON
XAXO
1400
原装现货海量库存欢迎咨询
询价
ON
12+
SOP-14
2500
原装现货/特价
询价
ON
23+
SOP5.2
65600
询价
MOTOROLA/摩托罗拉
23+
SOP-14
50000
全新原装正品现货,支持订货
询价
ON/安森美
23+
SOP14
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MOTOROLA/摩托罗拉
22+
DIP14
12000
只做原装、原厂优势渠道、假一赔十
询价
MOT
23+
SOP14
20000
全新原装假一赔十
询价
更多MC14069UB供应商 更新时间2025-10-14 13:31:00