型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MC14069UB | Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MC14069UB | Hex Inverter 文件:115.69 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MC14069UB | Hex Inverter 文件:145.23 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | |
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat 文件:171.8 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Type:
Inverter
- Channels:
6
- VCC Min (V):
3
- VCC Max (V):
18
- tpd Max (ns):
100
- IO Max (mA):
null
- Package Type:
SOIC-14
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
A |
24+ |
b |
16 |
询价 | |||
MOT |
08+ |
SOP14 |
15 |
全新原装进口自己库存优势 |
询价 | ||
MOT |
17+ |
SOP14 |
9988 |
只做原装进口,自己库存 |
询价 | ||
ON |
XAXO |
1400 |
原装现货海量库存欢迎咨询 |
询价 | |||
ON |
12+ |
SOP-14 |
2500 |
原装现货/特价 |
询价 | ||
ON |
23+ |
SOP5.2 |
65600 |
询价 | |||
MOTOROLA/摩托罗拉 |
23+ |
SOP-14 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
23+ |
SOP14 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
MOTOROLA/摩托罗拉 |
22+ |
DIP14 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
MOT |
23+ |
SOP14 |
20000 |
全新原装假一赔十 |
询价 |
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