NPN SILICON EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION For switching and amplifier applications. E specially suitable for AF d river stages a nd low powe r output stages. The MBT489L is available in SOT 23 p a ckage FEATURES  Availabl e in SOT 23 p ackage

文件：494.95 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

TRANSISTOR

AiT-Semi

创瑞科技

InGaP/GaAs HBT MMIC Amplifier

[Sirenza] Product Features • High Gain : 14.5 dB at 1950 Mhz • Cascadable 50 ohm • Patented InGap Technology • Operates From Single Supply • Low Thermal Resistance Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite

文件：295.76 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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InGaP/GaAs HBT MMIC Amplifier

Product Features • High Gain : 14.5 dB at 1950 Mhz • Cascadable 50 ohm • Patented InGap Technology • Operates From Single Supply • Low Thermal Resistance Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite

文件：418.71 Kbytes 页数：5 Pages

SIRENZA

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .

文件：21.57 Kbytes 页数：2 Pages

NTE