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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FDR140T3G	文件：277.56 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	FS First Silicon Co., Ltd	FS
LMBR140T3G	文件：261.97 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifierPlasticSOD??23Package	LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司	LRC
MBRA140T3	文件：6.37993 Mbytes Page：2 Pages	CHIPSCHOTTKYBARRIERDIODES FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.	TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司	TAYCHIPST
MBRA140T3	文件：135.61 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier SurfaceMountSchottkyPowerRectifier SMAPowerSurfaceMountPackage ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowv	MotorolaMotorola, Inc 摩托罗拉	Motorola
MBRA140T3	文件：72.11 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRA140T3	文件：106.31 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRA140T3	文件：71.44 Kbytes Page：2 Pages	ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype Siliconepitaxialplanertype Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
MBRA140T3G	文件：106.31 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRA140T3G	文件：99.84 Kbytes Page：2 Pages	SURFACEMOUNTSURFACEMOUNT	EIC EIC	EIC
MBRA140T3G	文件：107.18 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRA140T3G	文件：301.4 Kbytes Page：6 Pages	SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.Stateoftheartgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRM140T3	文件：69.83 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRM140T3	文件：94.68 Kbytes Page：8 Pages	SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERES,40VOLTS POWERMITE®PowerSurfaceMountPackage TheSchottkyPowermite®employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop−reversecurrenttradeoff.Theadvancedpackagin	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRM140T3G	文件：69.83 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRM140T3G	文件：163.32 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS140T3	文件：56.38 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS140T3	文件：71.23 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolaritypr	MotorolaMotorola, Inc 摩托罗拉	Motorola
MBRS140T3G	文件：63.3 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS140T3G	文件：104.99 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS140T3G	文件：56.38 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	MBRSS140T3G	ON/安森美	23+	SMD	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市旺财半导体有限公司	MBRSS140T3G	ON	23+	SMD	12000	正品原装货价格低qq:2987726803	询价
深圳市鑫远鹏科技有限公司	MBRT10200CT	海矽美	21+	10A 200V TO-220AB	413	原装现货	询价
深圳市艾宇欣科技有限公司	MBRT120100	GeneSiC	1935+	N/A	55	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	MBRT120100	GENESIC	1809+	三塔	96	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	MBRT120100	GeneSiC	22+	NA	55	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	MBRT120100	GeneSiC Semiconductor	22+	Three Tower	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	MBRT120100	GeneSiC Semiconductor	21+	Three Tower	13880	公司只售原装,支持实单	询价
深圳市吉铭电子科技有限公司	MBRT120100	GeneSiC Semiconductor	21+	Three Tower	610880	本公司只售原装支持实单	询价
易创佳业科技（深圳）有限公司	MBRT120100	GeneSiC Semiconductor	23+	Three Tower	9000	原装正品，支持实单	询价

更多MBRSS140T3G供应商更新时间2024-5-25 17:18:00

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