Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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SCHOTTKY FAST SOFTRECOVERY RECOVERY POWER RECTIFIER

PRV : 200 Volts IO : 3.0 Amperes FEATURES : * Lower forward voltage than any ultrafast rectifier: V F

文件：94.51 Kbytes 页数：2 Pages

EIC

Schottky Fast Soft-Recovery Power Rectifier

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：62.23 Kbytes 页数：4 Pages

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200V, 3A Schottky Fast Soft-Recovery Power Rectifier

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：44.06 Kbytes 页数：4 Pages

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Schottky Fast Soft-Recovery Power Rectifier

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：130.33 Kbytes 页数：4 Pages

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安森美半导体

Schottky Power Rectifier, Surface Mount, Fast Soft-Recovery 200V, 3.0A SMC Power Surface Mount Package

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：201.75 Kbytes 页数：5 Pages

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Schottky Power Rectifier, Surface Mount, Fast Soft-Recovery 200V, 3.0A SMC Power Surface Mount Package

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：201.75 Kbytes 页数：5 Pages

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SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

文件：51.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polari

文件：106.86 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

文件：184.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体