首页 >MBRS140T3(B14)>规格书列表

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MBRS140T3G

SurfaceMountSchottkyPowerRectifier

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal−to−siliconpowerdiode. State−of−the−artgeometryfeaturesepitaxialconstructionwithoxide passivationandmetaloverlaycontact.Ideallysuitedforlowvoltage, highfrequencyrectification,or

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA140T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA140T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA140T3G

1.0AmpereSurfaceMountTypeUltraFastRecoveryRectifierDiode

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

MURA140T3G

PowerRectifier,Ultra-FastRecovery,1A,300-400V

Ideallysuitedforhighvoltage,highfrequencyrectification,oras freewheelingandprotectiondiodesinsurfacemountapplications wherecompactsizeandweightarecriticaltothesystem. Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforAutom

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA140T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA140T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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