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MBRS130LT3G

SchottkyPowerRectifier

ONSEMION Semiconductor

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MBRS130LT3G

SchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS130LT3G

SchottkyPowerRectifier

SchottkyPowerRectifier SurfaceMountPowerPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS130LT3G

SchottkyPowerRectifierSurfaceMountPowerPackage

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification, orasfreewheelingandpol

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NRVBA130LT3G

SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage

ThisdeviceemploystheSchottkyBarrierprincipleina metal−to−siliconpowerrectifier.Featuresepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforlow voltage,highfrequencyswitchingpowersupplies;freewheeling diodesandpolarityprotectiondiod

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NRVBA130LT3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NRVBM130LT3G

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier POWERMITE®PowerSurfaceMountPackage TheSchottkyPowermite®employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop−reversecurrenttradeoff.Theadvancedpackagingtechniquesprov

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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