Schottky Power Rectifier

文件：95.76 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

文件：139.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

文件：139.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

文件：95.76 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 1.0 A

文件：105.4 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER 1 Amp

文件：111.89 Kbytes 页数：6 Pages

IRF

Schottky Rectifier, 1.0 A

文件：105.4 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Power Rectifier, Surface Mount, 1.0 A, 30 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Compact surface mount package with J-bend leads.\n• 1.5 Watts Power Dissipation Package\n• 1.0 Ampere, forward voltage less than 395mV;

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 2A SMB

ONSEMI

安森美半导体

肖特基功率整流器，表面贴装，1.0 A，30 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25 °C)\n• Small Compact Surface Mountable Package with J-Bend Leads\n• Highly Stable Oxide Passivated Junction\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 95 mg (approximately)\n• ;

ONSEMI

安森美半导体