MBRF3035CT /MBRF3040CT /MBRF3045CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：192.04 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ Low reverse leakage current ◆ High surge current capability Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

文件：541.69 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Dual Schottky Barrier Rectifiers

文件：117.09 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件：1.13096 Mbytes 页数：3 Pages

KERSEMI

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：180.55 Kbytes 页数：2 Pages

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：259.38 Kbytes 页数：3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件：231.33 Kbytes 页数：4 Pages

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：180.55 Kbytes 页数：2 Pages

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：259.38 Kbytes 页数：3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件：231.33 Kbytes 页数：4 Pages

TSC

台湾半导体