Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency

文件：272.76 Kbytes 页数：2 Pages

TSC

台湾半导体

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliabi

文件：99.32 Kbytes 页数：5 Pages

SMC

桑德斯微电子

MBRF2045 SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

文件：804.93 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

Isolated 20.0AMP. Schottky Barrier Rectifiers

文件：214.11 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：149.75 Kbytes 页数：2 Pages

TSC

台湾半导体

Isolated Schottky Barrier Rectifiers

文件：218.36 Kbytes 页数：4 Pages

TSC

台湾半导体

丝印：MBRF2045CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

肖特基二极管

SMC

桑德斯微电子

20A, 45V, Schottky Rectifier

TSC

台湾半导体

肖特基二极管

YSW

盈胜微