Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件：1.67834 Mbytes 页数：4 Pages

KERSEMI

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：160.85 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：160.85 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE Schottky Power Rectifier

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1

文件：79.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1

文件：55.64 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：181.92 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：181.92 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：MBRF20100CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

MBRF20100CTL SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：418.09 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

MBRF20100CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：401.59 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子