SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current - 10.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency

文件：866.43 Kbytes 页数：2 Pages

DIOTECH

Full Pack High Voltage Schottky Rectifier

Specification Features: ● High Voltage Wide Range Selection, 100V, 150V & 200V ● High Switching Speed Device ● Low Forward Voltage Drop ● Low Power Loss and High Efficiency ● Guard Ring for Over-voltage Protection ● High Surge Capability ● RoHS Compliant ● Matte Tin(Sn) Lead Finish ●

文件：166.07 Kbytes 页数：3 Pages

FORMOSA

美丽微半导体

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeli

文件：901.41 Kbytes 页数：2 Pages

TGS

10A SCHOTTKY BARRIER RECTIFIER

Features □ Low forward voltage drop □ High frequency properties and switching speed □ Guard ring for over-voltage protection

文件：777.13 Kbytes 页数：3 Pages

WISDOM

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

文件：327.49 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SCHOTTKY RECTIFIER

Features: • 150 °C T J operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Thi

文件：93.79 Kbytes 页数：5 Pages

SMC

桑德斯微电子

Schottky Diode in a TO-220F Plastic Package

Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.

文件：755.88 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic material used carries Underwriters Laboratory Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

文件：894.83 Kbytes 页数：2 Pages

KERSEMI

Dual Common-Cathode High-Voltage Schottky Rectifier

Description The MBRF10150CT_MBRF10200CT is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial appli

文件：427.74 Kbytes 页数：4 Pages

BWTECH

Guardring for overvoltage protection

Reverse Voltage 150 Volts Forward Current 10.0 Amperes Features ◆ Guardring for overvoltage protection ◆ Low power loss, high efficiency ◆ Low forward voltage drop ◆ High frequency operation ◆ Solder Dip 260 °C, 40 seconds ◆ For use in high frequency inverters, free wheeling and polarity

文件：465.95 Kbytes 页数：3 Pages

FS