SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

文件：60.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

30 Amp Schottky Barrier Rectifier 30 to 60 Volts

Features • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Marking : type number • Lead Free Fin

文件：245.84 Kbytes 页数：3 Pages

MCC

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

文件：77.52 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Schottky Barrier Rectifier

FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency

文件：282.01 Kbytes 页数：2 Pages

ISC

无锡固电

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

文件：375.56 Kbytes 页数：2 Pages

DSK

30 Amp Schottky Barrier Rectifier 30 to 60 Volts

文件：257.149 Kbytes 页数：3 Pages

MCC

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

文件：60.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

Description/Features This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters

文件：561.95 Kbytes 页数：6 Pages

IRF

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125°C Operating Junct

文件：91.6 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 15 A

DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe

文件：113.51 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司