20.0 Ampere Surface Mount Schottky Barrier Rectifiers

文件：376.82 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Schottky Diode in a TO-263 Plastic Package

文件：751.65 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A

文件：222.97 Kbytes 页数：3 Pages

FS

SWITCHMODE Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：62.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：148.01 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from

文件：173.55 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from

文件：173.55 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：MBR20200CTS；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：1.01261 Mbytes 页数：3 Pages

RFE

RFE international

SWITCHMODE Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：62.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from

文件：173.55 Kbytes 页数：6 Pages

ONSEMI

安森美半导体