SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.5555 Mbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This is a Pb − Free Device • Al

文件：164.4 Kbytes 页数：6 Pages

SMC

桑德斯微电子

SCHOTTKY RECTIFIER

FEATURES ● 150°C TJ operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● High frequency operation ● Guard ring for enhanced ruggedness and long term reliability APPLICATIONS ● Switching mode power

文件：174.57 Kbytes 页数：4 Pages

SENSITRON

Schottky Rectifier, 16 A

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package) • Solder bath te

文件：105.87 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Schottky Barrier Rectifier

DESCRIPTION The MBR16.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and

文件：487.11 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

SWITCHMODE Power Rectifiers16 A, 35 and 45 V

SWITCHMODE™ Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Pb−Free Packages are Available

文件：107.1 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch Mode Power Rectifiers 16 A, 35 and 45 V

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

文件：177.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.5555 Mbytes 页数：2 Pages

SUNMATE

森美特

Schottky Barrier Rectifier

DESCRIPTION The MBR16.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and

文件：487.11 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Schottky Barrier Rectifier

DESCRIPTION The MBR16.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and

文件：487.11 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世