MBRB1090-M3

High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C •Materialcategorization:fordefinitionsofcompliance plea

MBRB1090-M3/ MBRB10100-M3

High-Voltage Trench MOS Barrier Schottky Rectifier; ·Trench MOS Schottky technology\n·Lower power losses, high efficiency\n·Low forward voltage drop\n;

分立

MBRB1090-M3_V01

High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C •Materialcategorization:fordefinitionsofcompliance plea

MBRB1090-M3

High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier; Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

MBRB1090-M3/MBRB10100-M3

High-Voltage Trench MOS Barrier Schottky Rectifier; Trench MOS Schottky technology\n Lower power losses, high efficiency\n Low forward voltage drop\n\n \n;

MBRB1090CT-E3/8W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 90V TO263AB

Vishay General Semiconductor - Diodes Division

MBRB1090-E3/4W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 90V 10A TO263AB

Vishay General Semiconductor - Diodes Division

MBRB1090-E3/8W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 90V 10A TO263AB

Vishay General Semiconductor - Diodes Division