SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125°C Operating Junct

文件：91.6 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125C Operating Junct

文件：185.02 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 30V D2PAK

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 15 A

文件：111.35 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件：111.35 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件：111.35 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司