Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件：78.47 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：MBRB10100CT；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：1.0117 Mbytes 页数：3 Pages

RFE

RFE international

2SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

文件：337.95 Kbytes 页数：2 Pages

BILIN

银河微电

Schottky Barrier Diode

FEATURES · Lead-Free Finish, RoHS Compliant · High Surge Current Capability · Low Forward Voltage Drop APPLICATIONS · Switching Diode · Polarity Protection Diode · Re-Circulating Diode

文件：275.45 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

文件：93.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

文件：93.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Diode

FEATURES · High Surge Current Capability · Lower Power Losses, High Efficiency · Low Forward Voltage Drop APPLICATIONS · Switching Mode Power Supplies · DC to DC Converters · Free-Wheeling Diode

文件：276.18 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

文件：93.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：MBRB10100CTS；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：991.61 Kbytes 页数：3 Pages

RFE

RFE international

Schottky Barrier Diode

FEATURES · High Forward Surge Capability · Low Forward Voltage Drop · Low Power Losses, High Efficiency APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarity Protection Applications

文件：274.23 Kbytes 页数：2 Pages

ISC

无锡固电