丝印：AF36；Package：SMAF；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：524.31 Kbytes 页数：3 Pages

SY

顺烨电子

3 A，60 V，肖特基整流器

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity • Low Profile Package for Space Constrained Applications\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• 150°C Operating Junction Temperature\n• Guard-Ring for Stress Protection\n• These are Pb-Free and Halide-Free DevicesMechanical Characteristics:\n• Cas;

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：105.81 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：64.8 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：64.8 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：DO-221AC，SMA 扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 4A SMA-FL

ONSEMI

安森美半导体