Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

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安森美半导体

Surface Mount Schottky Power Rectifier

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泰迪斯电子

Surface Mount Schottky Power Rectifier

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安森美半导体

Surface Mount Schottky Power Rectifier

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：61.12 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

肖特基功率整流器，表面贴装，3.0 A，20 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bent Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop\n• Guardring for Stress Protection\n• Pb-Free Package is Available Mechanical Characteristics :\n• Case: Epoxy, Molded;

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安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 20V 3A SMA

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安森美半导体