丝印：MBR360；Package：SMC；SCHOTTKY BARRIER DIODE

文件：368.93 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling

文件：57.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

文件：59.75 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体