30A High Power Schottky Barrier Rectifiers

文件：1.65021 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

文件：989.7 Kbytes 页数：2 Pages

SY

顺烨电子

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectificatio

文件：669.33 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =65A RDS(ON)

文件：617.25 Kbytes 页数：7 Pages

NCEPOWER

新洁能