MBR3045WTP SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

文件：299.89 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

文件：386.22 Kbytes 页数：7 Pages

SMC

桑德斯微电子

Schottky Rectifier, 2 x 15 A

DESCRIPTION The VS-MBR30..WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv

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VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件：162.04 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件：162.04 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

肖特基二极管

MOT

仁懋

肖特基势垒整流器，30 A，45 V

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Dual Diode Construction - Terminals 1 and 3 may be Connected forParallel Operation at Full Rating\n• Guardring for Stress Protection\n• Low Forward Voltage\n• 150°C Operating Junction Temperature\n• Popular TO-247 PackageMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 4.3 grams ;

ONSEMI

安森美半导体

Schottky Diodes

FormosaMS

美丽微半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 45V TO247

ONSEMI

安森美半导体

Package：TO-247-3；包装：托盘 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 45V TO247AC

Vishay General Semiconductor - Diodes Division