DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

文件：152.82 Kbytes 页数：2 Pages

BILIN

银河微电

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 20.0 Amperes

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 20.0 Amperes

文件：168.54 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 20 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters

文件：87.27 Kbytes 页数：2 Pages

PANJIT

強茂

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

文件：102.81 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

20 to 100 Volts Forward Current -

Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

文件：621.87 Kbytes 页数：2 Pages

CHENDA

辰达半导体

DUAL SCHOTTKY RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

文件：231.75 Kbytes 页数：2 Pages

DSK

20.0 AMPS. Schottky Barrier Rectifiers

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequ

文件：2.25025 Mbytes 页数：2 Pages

YIXIN

壹芯微

Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件：1.67834 Mbytes 页数：4 Pages

KERSEMI

SWITCHMODE POWER RECTIFIERS

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

文件：790.4 Kbytes 页数：3 Pages

KERSEMI

SWITCHMODE Power Rectifiers

SWITCHMODE Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junctio

文件：482.97 Kbytes 页数：4 Pages

KERSEMI