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MBR20100CT

SCHOTT KY BARRIER RECTIFIERS

Reverse Voltage - 100 V Forward Current - 20 A FEATURES ♦ Low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Cas

文件:360.03 Kbytes 页数:2 Pages

YFWDIODE

佑风微

MBR20100CT

SCHOTTKY RECTIFIERS

VOLTAGE 20~ 20 0Volts CURRENT 20 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capab

文件:2.22028 Mbytes 页数:5 Pages

NIUHANG

纽航电子

MBR20100CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件:427.67 Kbytes 页数:2 Pages

KERSEMI

MBR20100CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件:787.87 Kbytes 页数:2 Pages

KERSEMI

MBR20100CT

SWITCHMODE Power Rectifiers

SWITCHMODE Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junctio

文件:482.97 Kbytes 页数:4 Pages

KERSEMI

MBR20100CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

文件:427.67 Kbytes 页数:2 Pages

KERSEMI

MBR20100CT

Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件:1.67834 Mbytes 页数:4 Pages

KERSEMI

MBR20100CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件:438.84 Kbytes 页数:2 Pages

KERSEMI

MBR20100CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件:438.84 Kbytes 页数:2 Pages

KERSEMI

MBR20100CT

Dual SchottkyBarrierRectifiers ReverseVoltage 100V Volts ForwardCurrent 20.0Amperes

egatloVesreveR 100V Volts serepmA0.02tnerruCdrawroF Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardr

文件:299.48 Kbytes 页数:3 Pages

FS

产品属性

  • 产品编号:

    MBR20100CT

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    20A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 150°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    DIODE SCHOTTKY 100V 20A TO220AB

供应商型号品牌批号封装库存备注价格
MOSPEC
19+
TO220
18000
询价
YEASHIN
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
询价
ON/安森美
25+
TO-220
12500
全新原装现货,假一赔十
询价
25+
6
公司现货库存
询价
台半
25+
TO220
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
YEASHIN
16+
TO-220
36000
原装正品,优势库存81
询价
ON
24+
TO220
2500
进口原装现货/假一赔十
询价
VI-CHIP
23+
TO-220
65400
询价
ON
22+
TO-220
23650
原装正品,实单请联系
询价
ON
24+
TO220AB
6800
询价
更多MBR20100CT供应商 更新时间2026-1-21 16:03:00