Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：128.1 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODEE TM Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：42.05 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：130.419 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：96.9 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODEE TM Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：42.05 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Low forward voltage drop

DESCRIPTION The VS-MBR(B)15... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewh

文件：1.96723 Mbytes 页数：5 Pages

KERSEMI