Schottky Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for

文件：75.21 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

SWITCHMODE Power Rectifier

Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：130.419 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

15A Schottky Barrier Rectifier

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

文件：64.97 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Schottky Barrier Rectifier

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

文件：55.53 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions

文件：136.09 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

文件：84.33 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Dual rectifier construction, positive center tap

文件：1.90853 Mbytes 页数：5 Pages

SURGE

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

文件：384.34 Kbytes 页数：3 Pages

TSC

台湾半导体

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

文件：245.96 Kbytes 页数：2 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions

文件：136.09 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司