SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl

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AITSEMI

创瑞科技

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件：201.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件：201.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件：201.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件：201.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：108.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：108.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：108.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

DIODES

AiT-Semi

创瑞科技

40 V，1.0 A，肖特基整流器，低漏

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as recti • Guardring for Stress Protection\n• Low Reverse Leakage\n• 175C Operating Junction Temperature\n• Epoxy Meets UL 94 V0 @ 0.125 in\n• Package Designed for Optimal Automated Board Assembly\n• ESD Rating: (Human Body Model = 3B, Machine Model = M4)\n• NRVB Prefix for Automotive and Other Applications ;

ONSEMI

安森美半导体