| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10A SCHOTTKY RECTIFIER
| DIGITRON Digitron Semiconductors | DIGITRON | ||
Metal of siliconrectifier, majonty carrier conducton ThisseriesofSWITCHMODEpowerrectifiersusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •Guard−RingforStressProtection •LowForwardVoltage •175°COperatingJunctionTemperature •EpoxyMeetsUL9 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
10.0AMPS.Schottky Barrier Rectifiers VOLTAGERANGE:30-100VCURRENT:10A Features ✧Highsurgecapacity. ✧Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ✧Metalsiliconjunction,majoritycarrierconduction. ✧Highcurrentcapacity,lowforwardvoltagedrop. ✧Gua | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
Schottky Barrier Rectifier FEATURES •LowForwardVoltage •150℃OperatingJunctionTemperature •GuaranteedReverseAvalanche •LowPowerLoss/HighEfficiency •HighSurgeCapacity •LowStoredChargeMajorityCarrierConduction | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SCHOTTKY BARRIER RECTIFIER ReverseVoltage-20to200Volts ForwardCurrent-10.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency • | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司 | GXELECTRONICS | ||
High Temperature Schottky Rectifier Diodes •Nominalcurrent10A •Repetitivepeakreversevoltage100V •PlasticcaseTO-220AC •Weightapprox.1.8g •PlasticmaterialhasULclassification94V-0 •Standardpackagingintubes | Diotec Diotec Semiconductor | Diotec | ||
Schottky Barrier Rectifier 10AHighBarrierPowerSchottkyRectifiers-40V-200V Features •150°Coperatingjunctiontemperature. •Lowpowerloss,highefficiency. •Highcurrentcapability •Highsurgecapability. •Guardringforovervoltageprotection. •Lowstoredchargemajoritycarrierconduction •Siliconepi | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
Trench MOS Schottky technology Features •LowPowerLoss •HighEfficiency •LowForwardVoltage,HighCurrentCapability •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0 •Marking:typenumber | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Metal of siliconrectifier, majonty carrier conducton ThisseriesofSWITCHMODEpowerrectifiersusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •Guard−RingforStressProtection •LowForwardVoltage •175°COperatingJunctionTemperature •EpoxyMeetsUL9 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Metal of siliconrectifier, majonty carrier conducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
MBR1010
- 制造商：
HY
- 制造商全称：
HY ELECTRONIC CORP.
- 功能描述：
SILICON BRIDGE RECTIFIERS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYGROUP台产 |
24+ |
MBR-W |
50000 |
询价 | |||
ON |
05+ |
原厂原装 |
4246 |
只做全新原装真实现货供应 |
询价 | ||
DISCRETE |
50 |
ON |
11628 |
询价 | |||
ON |
2015+ |
TO-2202 |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
MOT |
23+ |
TO-220 |
5500 |
现货,全新原装 |
询价 | ||
AAT |
24+ |
TO-220 |
50000 |
原装现货假一罚十 |
询价 | ||
ON |
23+ |
TO220AC |
5000 |
原装正品,假一罚十 |
询价 | ||
LT |
16+ |
TO-220 |
8000 |
原装现货请来电咨询 |
询价 | ||
ON |
2020+ |
TO220-2 |
470 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MCC |
23+ |
TO-220AB |
7750 |
全新原装优势 |
询价 |
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