CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY

CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY

文件：487.42 Kbytes 页数：12 Pages

Fujitsu

富士通

BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT

■ DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP a

文件：1.11853 Mbytes 页数：84 Pages

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BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT

■ DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP a

文件：1.11853 Mbytes 页数：84 Pages

spansion

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BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

■ GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. ■ FEA

文件：314.15 Kbytes 页数：60 Pages

spansion

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BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

■ GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. ■ FEA

文件：314.15 Kbytes 页数：60 Pages

spansion

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BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

■ GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. ■ FEA

文件：314.15 Kbytes 页数：60 Pages

spansion

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BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

■ GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. ■ FEA

文件：314.15 Kbytes 页数：60 Pages

spansion

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BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

■ GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. ■ FEA

文件：314.15 Kbytes 页数：60 Pages

spansion

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16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

文件：1.14512 Mbytes 页数：76 Pages

Fujitsu

富士通

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(1) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

文件：1.0987 Mbytes 页数：74 Pages

spansion

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