512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

文件：2.62559 Mbytes 页数：38 Pages

RAMXEED

富士通

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

文件：2.62559 Mbytes 页数：38 Pages

RAMXEED

富士通

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

文件：2.62559 Mbytes 页数：38 Pages

RAMXEED

富士通

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

文件：2.62559 Mbytes 页数：38 Pages

RAMXEED

富士通

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

文件：2.62559 Mbytes 页数：38 Pages

RAMXEED

富士通

FeRAM (I2C接口)

Fujitsu

富士通

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC FRAM 512KBIT I2C 3.4MHZ 8SOP

Kaga FEI America, Inc.