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型号	下载订购	功能描述	制造商上传企业	LOGO
MB85RC256VN	文件：2.28242 Mbytes Page：26 Pages	256 K (32 K x 8) Bit IC  DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d 文件：2.28242 Mbytes 页数：26 Pages	RAMXEED 富士通	RAMXEED
MB85RC256VNPNF-G-AME2	文件：2.28242 Mbytes Page：26 Pages	256 K (32 K x 8) Bit IC  DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d 文件：2.28242 Mbytes 页数：26 Pages	RAMXEED 富士通	RAMXEED
MB85RC256VNPNF-G-AMERE2	文件：2.28242 Mbytes Page：26 Pages	256 K (32 K x 8) Bit IC  DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d 文件：2.28242 Mbytes 页数：26 Pages	RAMXEED 富士通	RAMXEED
MB85RC256VN	文件：300 bytes Page：1 Pages	I2C FeRAM系列	RAMXEED	RAMXEED

更多MB85RC256VN供应商更新时间2026-2-5 17:58:00