16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

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Memory FRAM 16 K (2 K x 8) Bit I2C

文件：138.42 Kbytes 页数：20 Pages

Fujitsu

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FeRAM (I2C接口)

Fujitsu

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16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

文件：2.21136 Mbytes 页数：35 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

文件：2.3944 Mbytes 页数：33 Pages

RAMXEED

富士通

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

文件：2.3944 Mbytes 页数：33 Pages

RAMXEED

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