4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

文件：2.30952 Mbytes 页数：31 Pages

RAMXEED

富士通

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

文件：2.30952 Mbytes 页数：31 Pages

RAMXEED

富士通

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

文件：2.30952 Mbytes 页数：31 Pages

RAMXEED

富士通

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

文件：2.30952 Mbytes 页数：31 Pages

RAMXEED

富士通

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes 页数：29 Pages

Fujitsu

富士通

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes 页数：29 Pages

Fujitsu

富士通

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes 页数：29 Pages

Fujitsu

富士通

Package：8-SOIC（0.154"，3.90mm 宽）；包装：散装 类别：集成电路（IC） 存储器 描述：IC FRAM 4KBIT I2C 1MHZ 8SOP

Kaga FEI America, Inc.