MB85RC04VPNF-G-JNE1中文资料富士通数据手册PDF规格书

 DESCRIPTION

The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at

least 1012 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC04V does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.

 FEATURES

• Bit configuration : 512 words  8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 1 MHz (Max)

• Read/write endurance : 1012 times / byte

• Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage: 3.0 V to 5.5 V

• Low-power consumption : Operating power supply current 90 A (Typ @1 MHz)

Standby current 5 A (Typ)

• Operation ambient temperature range

:  40 C to  85 C

• Package : 8-pin plastic SOP 150mil

RoHS compliant