256 K (32 K x 8) Bit

DESCRIPTIONS The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using

文件：1.80222 Mbytes 页数：21 Pages

RAMXEED

富士通

256 K (32 K 횞 8) ?볝긿?

文件：413.24 Kbytes 页数：36 Pages

FUJITSU

富士通

256 K (32 K x 8) Bit

DESCRIPTIONS The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using

文件：1.80222 Mbytes 页数：21 Pages

RAMXEED

富士通

FeRAM (并行接口)

Fujitsu

富士通

Package：28-SOIC（0.342"，8.69mm 宽）；包装：散装 类别：集成电路（IC） 存储器 描述：IC FRAM 256KBIT PARALLEL 28SOP

Kaga FEI America, Inc.

Package：28-SOIC（0.342"，8.69mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FRAM 256KBIT PARALLEL 28SOP

Kaga FEI America, Inc.

Package：28-SOIC（0.342"，8.69mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FRAM 256KBIT PARALLEL 28SOP

Kaga FEI America, Inc.