Memory FRAM

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Memory FRAM CMOS 1 M Bit (64 K 횞 16)

文件：367.27 Kbytes 页数：15 Pages

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Memory FRAM CMOS 1 M Bit (64 K 횞 16)

文件：127.8 Kbytes 页数：16 Pages

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Memory FRAM

Fujitsu

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1 M Bit (64 K x 16)

DESCRIPTIONS The MB85R1002A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up ba

文件：1.88296 Mbytes 页数：23 Pages

RAMXEED

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1 M Bit (64 K x 16)

DESCRIPTIONS The MB85R1002A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up ba

文件：1.88296 Mbytes 页数：23 Pages

RAMXEED

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Memory FRAM CMOS 1 M Bit (64 K 횞 16)

文件：367.27 Kbytes 页数：15 Pages

FUJITSU

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Memory FRAM CMOS 1 M Bit (64 K 횞 16)

文件：127.8 Kbytes 页数：16 Pages

FUJITSU

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Memory FRAM CMOS 1 M Bit (64 K x 16)

文件：206.84 Kbytes 页数：16 Pages

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1 M Bit (64 K 횞 16)

文件：142.87 Kbytes 页数：16 Pages

FUJITSU

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