首页 >MB84VD22182EB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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32M(x8/x16)FLASHMEMORY&4M(x8/x16)STATICRAM ■FEATURES •Powersupplyvoltageof2.7to3.3V •Highperformance 90nsmaximumaccesstime(Flash) 85nsmaximumaccesstime(SRAM) •OperatingTemperature –25to+85°C •Package73-ballBGA 1.FLASHMEMORY •SimultaneousRead/Writeoperations(dualbank) Miltipledevi | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu | ||
32M(x8/x16)FLASHMEMORY&4M(x8/x16)STATICRAM ■FEATURES •Powersupplyvoltageof2.7to3.3V •Highperformance 90nsmaximumaccesstime(Flash) 85nsmaximumaccesstime(SRAM) •OperatingTemperature –25to+85°C •Package73-ballBGA 1.FLASHMEMORY •SimultaneousRead/Writeoperations(dualbank) Miltipledevi | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu | ||
32M(x8/x16)FLASHMEMORY&4M(x8/x16)STATICRAM ■FEATURES •Powersupplyvoltageof2.7Vto3.3V •Highperformance 90nsmaximumaccesstime(Flash) 85nsmaximumaccesstime(SRAM) •OperatingTemperature –25°Cto+85°C •Package71-ballBGA 1.FLASHMEMORY •SimultaneousRead/Writeoperations(dualbank) Multiple | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu | ||
32M(x8/x16)FLASHMEMORY&4M(x8/x16)STATICRAM ■FEATURES •Powersupplyvoltageof2.7Vto3.3V •Highperformance 90nsmaximumaccesstime(Flash) 85nsmaximumaccesstime(SRAM) •OperatingTemperature –25°Cto+85°C •Package71-ballBGA 1.FLASHMEMORY •SimultaneousRead/Writeoperations(dualbank) Multiple | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu |
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