8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：348.31 Kbytes 页数：29 Pages

FUJITSU

富士通

8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：348.31 Kbytes 页数：29 Pages

FUJITSU

富士通

8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

Fujitsu

富士通

TSOP-28

FUJITSU/富士通

上传：京海半导体(深圳)有限公司

SOP28

FUJITSU/富士通

上传：深圳市俊晖半导体有限公司