S I N GLE PHASE AMP SURFACE MOUNT BRIDGE RECTIFIER 3.0 SCHOTTKY

Features Schottky Brrier Chip Low Power Loss,High Efficiency Ideally Suited for Automatic Assembly Surge Overload Rating to 80A Peak Plastic Case Material has UL Flammability Classification Rating 94V-0 Case: MB-S, molded plastic Mechanical Data · Polarity: as marked on case · Mounting

文件：1.04278 Mbytes 页数：2 Pages

SHUNYE

顺烨电子

Schottky Mount glass Passivatd Bridge Rectifier

文件：919.54 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

RECTIFIER整流管

Leiditech

雷卯电子

BROADBAND RF POWER TRANSISTOR NPN SILICON

文件：95.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

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NTE

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR325CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

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PHI

PHI