MJE270

PLASTICPOWERTRANSISTOR

MJE270G

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

MJE270G

ComplementarySiliconPowerTransistors

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant*

MJE270G

ComplementarySiliconPowerTransistors

Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant

MJE270TG

ComplementarySiliconPowerTransistors

Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant

MMBFJ270

P-ChannelSwitch

Features •Thisdeviceisdesignedforlowlevelanalogswitchingsampleandholdcircuitsandchopperstabilizedamplifiers. •Sourcedfromprocess88.

MMBFJ270

P-ChannelSwitch

MMBFJ270

P-CHANNELSWITCH

FEATURES •Thisdeviceisdesignedforlowlevelanalogswitchingsampleandholdcircuitsandchopperstabilizedamplifiers •IncompliancewithEURoHS2002/95/ECdirectives

MO270

WirelessCombinationPin/PinlessMoistureMeter

MP270

QuartzCrystal

DESCRIPTION TheMPcrystalseriesoffersexcellentlong-termstabilityandreliabilityinaprovenresistanceweldmetalpackage.Theexcellentshockperformancemakesitsuitableformicroprocessor,telecommunication,consumerelectronicandnetworkingapplications. FEATURES •StandardHC-49/U