Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

文件：179.59 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 2A TO126

ONSEMI

安森美半导体

P-Channel Switch

Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88.

文件：46.47 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

P-Channel Switch

文件：408.46 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-CHANNEL SWITCH

FEATURES • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers • In compliance with EU RoHS 2002/95/EC directives

文件：198.91 Kbytes 页数：5 Pages

PANJIT

強茂