首页 >MAX845ESA(BULK)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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IsolatedTransformerDriverforPCMCIAApplications GeneralDescription TheMAX845providesanisolatedpowersupplysmallenoughtofitinthinPCMCIAcardsandspace-sensitiveapplications.Itdrivesalow-profilecenter-tappedtransformerprimaryfroma5Vor3.3VDCpowersupply.Thesecondarycanbewoundtoprovideanyisolatedpositiveor | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
IsolatedPowerSupply | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
IsolatedPowerSupply | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
8.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | ||
AxialLeadRectifiers AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A ReverseVoltage40to200V ForwardCurrent8.0A Features •LowPowerLoss，HighEfficiency •LowForwardVoltageDrop •HighCurrentCapability •LeadandbodyaccordingwithRoHSstandard | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | DACHANG | ||
8.0ASCHOTTKYBARRIERDIODE Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
8.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
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