5V/3.3V/3V or Adjustable, High-Efficiency,

General Description The MAX649/MAX651/MAX652 BiCMOS, step-down DC-DC switching controllers provide high efficiency over three decades of load current. A unique, current-limited pulse-frequency-modulated (PFM) control scheme gives these devices the benefits of pulse-width-modulation (PWM) converte

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MAXIM

美信

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

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MOTOROLA

摩托罗拉

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

文件：111.83 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52

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STMICROELECTRONICS

意法半导体