首页 >MAX6306ECK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
5-Pin,Multiple-Input,ProgrammableResetICs | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
5-Pin,Multiple-Input,ProgrammableResetICs | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
P-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MCH6306 General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
650V20AInsulatedGateBipolarTransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NATIONALAEROSPACESTANDARD | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
LASERDIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
