MAX410MSASLASHPR-T

Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps

MBRS410L

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

MH-410D

NDIRInfraredCO2GasSensor

MHT410

MHT410Moisture,HydrogenandTemperatureTransmitter

Featuresandbenefits Measuresmoistureandhydrogen directlyintransformeroil Compatiblewithmineraloil, naturalesteroil,syntheticester oil,andsiliconeoil Easytoinstall Providesearlywarningon potentialtransformerfaults Uniqueprobedesignallowsfor directmeasurement

MJ410

5AMPEREPOWERTRANSISTORNPNSILICON

HighVoltageNPNSiliconTransistors ...designedformediumtohighvoltageinverters,converters,regulatorsandswitchingcircuits. •HighCollector–EmitterVoltage—VCEO=200Volts •DCCurrentGainSpecified@1.0and2.5Adc •LowCollector–EmitterSaturationVoltage—VCE(sat)=0.8

MJ410

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcollector-emittervoltage •Lowcollectorsaturationvoltage APPLICATIONS •Designedformediumtohighvoltageinverters,converters,regulatorsandswitchingcircuits.

MJ410

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterSustainingVoltage-:VCEO(SUS)=200V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=0.8V(Max)@IC=1A APPLICATIONS •Designedformediumtohighvoltageinverters,converters,regulatorsandswitchingcircuits.

MJ410

HighVoltageNPNSiliconTransistors

...designedformediumtohighvoltageinverters,converters,regulatorsandswitchingcircuits. •HighCollector-EmitterVoltage—VCEO=200Volts •DCCurrentGainSpecified@1.0and2.5Adc •LowCollector-EmitterSaturationVoltage—VCE(sat)=0.8Vdc@lc=1.0Adc

MJ410

SiliconNPNPowerTransistors

ML410PZA

HighReliabilityPowerInductors