MRF327

NPNSiliconRFPowerTransistor

TheRFLine NPNSiliconRFPowerTransistor ...designedprimarilyforwidebandlarge–signaloutputamplifierstagesinthe100to500MHzfrequencyrange. •GuaranteedPerformance@400MHz,28Vdc OutputPower=80Wattsover225to400MHzBand MinimumGain=7.3dB@400MHz •Bu

MRT-327

UserStation

•TheMRT-327cansendandreceive20kHzcall signals. •TheMICon/offswitchcanbeusedasamomentary push-to-talkswitchorasalatchingon/offswitch. •TheMRT-327canreceive24kHztalk-off(mickill) signalsfordeactivationoftheMRT-327microphone fromaremotelocation. •The

NGRUS327

NeutralGroundingResistorSystem,NGRSERIES–US

Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar

NTE327

SiliconNPNTransistorPowerAmp,Switch

Description: TheNTE327isasiliconNPNtransistorinaTO3typepackagedesignedforuseinindustrialamplifierandswitchingcircuitapplications. Features: ●HighCollector–EmitterSustainingVoltage ●HighDCCurrentGain ●LowCollector–EmitterSaturationVoltage ●FastSwitchingTime

P-327-AB

[.050”(1.27mm)DensitySolderCup/WireD-Microminiature]MultipleDensitySolderEyeletWithAngleBracket/LessAngleBracket

P-327-DB

300SeriesDeepBracket(DB)

P-327-LAB

[.050”(1.27mm)DensitySolderCup/WireD-Microminiature]MultipleDensitySolderEyeletWithAngleBracket/LessAngleBracket

PNZ327

PINPhotodiode

Foropticalcontrolsystems Features Fastresponsewhichiswellsuitedtohighspeedmodulatedlightdetection:tr,tf=50ns(typ.) Highsensitivity,highreliability Peaksensitivitywavelengthmatchedwithinfraredlightemittingdiodes:λP=900nm(typ.) Widedetectionar

S-327-DB

300SeriesDeepBracket(DB)

SBC327

Highcurrentapplication