MICRF219AYQS

300MHzto450MHzASKReceiverwithRSSI,Auto-Poll,Bit-Che

MO-219

TheFlipStack®CSPfamilyutilizesAmkor’sindustryleadingChipArray®BallGridArray(CABGA)manufacturingcapabilities

FEATURES Packageheightdownto0.6mm Design,assemblyandtestcapabilitiesthatenablestackingcombinationsofmemory,logicandmixedsignaltypedevices EstablishedpackageinfrastructurewithstandardCABGAandfcCSPfootprints Consistentproductperformancewithhighyieldsandrel

MZ219

3WATTZENERDIODES

3WATTZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

MZ219

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

NCSL219BT

SPECIFICATIONSFORWARMWHITELED

NCSW219BT

SPECIFICATIONSFORWHITELED

NE219

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NTE219

SiliconPowerTransistorAudioPowerAmp,MediumSpeedSwitch

Description: TheNTE130(NPN)andNTE219(PNP)aresiliconcomplementarytransistorsinaTO3typecasedesignedforgeneralpurposeswitchingandamplifierapplications. Features: •DCCurrentGain:hFE=20–70@IC=4A •Collector–EmitterSaturationVoltage:VCE(sat)=1.1V(Max

NVSA219B

rohscompliant

NVSL219BT

SPECIFICATIONSFORWARMWHITELED