GaN Wideband Transistor Die

The MATR-GSHC03-160150 GaN HEMT is a wideband transistor die optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm). The MATR-GSHC03-160150 is ideally suited for defense communications, land mobile radio, avionics, wire ·GaN on Si HEMT D-Mode Transistor Die\n·54% Drain Efficiency @ 2.5 GHz\n·12 dB Gain @ 2.5 GHz\n·28 V Operation\n·Broadband Operation DC - 3.5 GHz\n·Suitable for linear and saturated applications\n·Active Area Periphery: 16 mm\n·100% DC Tested\n·RoHS* Compliant\n·Chip Dimensions: 0.60 mm x 4.;

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GaN Wideband Transistor Die

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