Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

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AVIONICS PULSED POWER TRANSISTOR

AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10 Duty Cycle FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold M

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Avionics Pulsed Power Transistor

文件：122.92 Kbytes 页数：4 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·RoHS Compliant\n·Hermetic Metal/Ceramic P;

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包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V 1.215GHZ

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Avionics Pulsed Power Transistor

文件：122.92 Kbytes 页数：4 Pages

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Avionics Pulsed Power Transistor

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