Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

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Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100關sec, 170W

Features 190W, 53 efficiency, typical RF performance 36V, 24W nominal RF input drive Designed for ATC radar applications NPN silicon microwave power transistor Common base, Class-C configuration High efficiency inter-digitated geometry Gold metallization system Inte

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Radar Pulsed Power Transistor

文件：111.39 Kbytes 页数：3 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·Hermetic Metal/Ceramic P;

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包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V

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Radar Pulsed Power Transistor

文件：111.39 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：664.76 Kbytes 页数：4 Pages

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